Temperature dependence of threshold current in (GaAl)as double-heterostructure lasers with emission wavelengths of 0.74-0.9µm

Author

Hayakawa, Toshiro ; Yamamoto, Saburo ; Hayashi, Hiroshi ; Sakurai, Takeshi ; Hijikata, Toshiki

Author_Institution

Sharp Corp., Nara, Japan

Volume

17

Issue

11

fYear

1981

fDate

11/1/1981 12:00:00 AM

Firstpage

2205

Lastpage

2210

Abstract

The threshold-current variation with temperature has been measured for Ga1-xAlxAs double-heterostructure (DH) lasers with AlAs mole fraction in the active layer $x$ of 0.08 and 0.2, and with several heterojunction step heights $\\Delta x$ . The threshold-temperature coefficient Jth(350 K)/Jth(300 K), which generally increases with decreasing $\\Delta x$ , is found to be larger for $x = 0.2$ than that for $x = 0.08$ at the same value of $\\Delta x$ , and also to be larger for the lasers with smaller effective electron diffusion length in the $P$ cladding layer, in the case of $x = 0.2$ . These characteristics are well explained by a model of carrier leakage due to unconfined carriers in the active layer. It is confirmed by a good fit of the experimental results with the calculated values that the electron leakage in the $\\Gamma$ conduction band of the $P$ cladding layer dominates for $x \\leq 0.1$ , but the hole leakage in the $N$ cladding layer increases with $x$ and becomes comparable in magnitude with the electron leakage at $x \\sim 0.2$ .

Keywords

Gallium materials/lasers; Laser thermal factors; Charge carrier processes; Current measurement; DH-HEMTs; Laser modes; Leakage current; Length measurement; Light sources; Temperature dependence; Temperature measurement; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1981.1070683

Filename

1070683