Estimation of doping profiles in short channel MOSFET´s using DC Measurements

Estimation of impurity profiles in short channel enhancement-mode MOSFET´s using the dc measurement technique is studied. The use of long channel theory predicts erroneous impurity profiles for devices with channel lengths of less than 6 µm. A new empirical model for substrate charge sharing is presented which provides good agreement between profiles estimated by measurements on identically doped long and short channel MOSFET´s. It is found that the dc measurement technique can be extended to enhancement-mode MOSFET´s with channel lengths as small as 2.5 µm.