Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing

Author

Kumagai, Masayoshi ; Uchiyama, Naoki ; Ohmura, Etusji ; Sugiura, Ryuji ; Atsumi, Kazuhiro ; Fukumitsu, Kenshi

Author_Institution

Hamamatsu Photonics K.K., Hamamatsu

Volume

20

Issue

3

fYear

2007

Firstpage

259

Lastpage

265

Abstract

ldquoStealth dicing (SD)rdquo was developed to solve inherent problems of a dicing process such as debris contaminants and unnecessary thermal damages on a work wafer. A completely dry process is another big advantage over other dicing methods. In SD, the laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing the temperature dependence of the absorption coefficient of the wafer. The absorbed power forms a modified layer in the wafer, which functions as the origin of separation in the separation process. In this paper, we applied this method for an ultra-thin wafer. The reliability of devices that is diced by SD was confirmed.

Keywords

laser beam cutting; semiconductor technology; absorption coefficient; advanced dicing technology; completely dry process; debris contaminants; laser processing; semiconductor wafer; separation process; stealth dicing; thermal damages; ultra-thin wafer; Blades; Focusing; Laser ablation; Laser beams; Optical design; Surface cleaning; Surface contamination; Surface cracks; Surface emitting lasers; Vibrations; Dicing; dry processing; laser processing; system in package; thin/ultra-thin wafer;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2007.901849

Filename

4285830