Gate CD Control Considering Variation of Gate and STI Structure

Author

Kurihara, Masaru ; Izawa, Masaru ; Tanaka, Jun´ichi ; Kawai, Kenji ; Fujiwara, Nobuo

Author_Institution

Hitachi, Tokyo

Volume

20

Issue

3

fYear

2007

Firstpage

232

Lastpage

238

Abstract

We developed a fab-wide advanced process control system to control the critical dimension (CD) of gate electrode length in semiconductors. We also developed a model equation that predicts the gate CD by considering the structures of gate electrode and shallow trench isolation. This prediction model was also used to perform a factor analysis of gate CD variation. The effectiveness of the model in controlling feedforward was evaluated by both simulation and experiment. The CD variation of the wafers was improved from 8.9 nm in its 3 sigma without control to 3.5 nm with lot-to-lot feedforward control.

Keywords

feedforward; isolation technology; nanotechnology; process control; semiconductor process modelling; spatial variables control; advanced process control; critical dimension control; feedforward control; gate electrode length; shallow trench isolation; size 3.5 nm; size 8.9 nm; Electrodes; Equations; Etching; Fluctuations; Lithography; Predictive models; Process control; Production; Semiconductor device modeling; Transistors; Advanced process control (APC); gate electrode; prediction model; shallow trench isolation;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2007.901837

Filename

4285831