• DocumentCode
    1083886
  • Title

    Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver

  • Author

    Wada, O. ; Sanada, T. ; Sakurai, T.

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    3
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    305
  • Lastpage
    307
  • Abstract
    An AlGaAs/GaAs double heterostructure light emitting diode (LED) and a GaAs field effect transistor (FET) have been monolithically integrated on a GaAs substrate using a combination of liquid phase and molecular beam epitaxies. The electrical isolation between LED and FET has been achieved by inserting a molecular beam-grown high resistivity AlGaAs layer. A linear gate voltage-to-light power transfer characteristic with a 13 ns time constant has been demonstrated.
  • Keywords
    Conductivity; DH-HEMTs; Driver circuits; FETs; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Monolithic integrated circuits; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25578
  • Filename
    1482683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083886