• DocumentCode
    1083939
  • Title

    Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As

  • Author

    Barnard, J.A. ; Wood, C.E.C. ; Eastman, L.F.

  • Author_Institution
    Cornell University, Ithaca, New York
  • Volume
    3
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    319
  • Abstract
    The first reported growth of the quaternary AlGaInAs on an InP substrate by molecular beam epitaxy had an equal aluminum-to-gallium mole fraction ratio, and exhibited a 5 K bandgap energy of 1.237 eV. This is intermediate between the 5 K band gap energy of Ga0.47In0.53As (0.810 eV) and that of Al0.48In0.52As (1.56 eV). A Schottky diode and a MESFET were fabricated on this material.
  • Keywords
    Absorption; Fiber lasers; Indium phosphide; Laser modes; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Substrates; Surface emitting lasers; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25583
  • Filename
    1482688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083939