• DocumentCode
    1083998
  • Title

    Direct-coupled GaAs ring oscillators with self-aligned gates

  • Author

    Kiehl, R.A. ; Flahive, P.G. ; Wemple, S.H. ; Cox, H.M.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    3
  • Issue
    11
  • fYear
    1982
  • fDate
    11/1/1982 12:00:00 AM
  • Firstpage
    325
  • Lastpage
    326
  • Abstract
    The performance of direct-coupled GaAs MESFET ring oscillators having a 1µm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-µm gate technology.
  • Keywords
    FETs; Gallium arsenide; Inverters; Lithography; MESFETs; Plasma temperature; Propagation delay; Ring oscillators; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25588
  • Filename
    1482693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083998