DocumentCode :
1084029
Title :
A proposed new method for damping relaxation oscillations in laser diodes
Author :
Katz, J. ; Margalit, S. ; Yariv, A.
Author_Institution :
California Institute of Technology, Pasadena, CA
Volume :
3
Issue :
11
fYear :
1982
fDate :
11/1/1982 12:00:00 AM
Firstpage :
333
Lastpage :
335
Abstract :
A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.
Keywords :
Artificial intelligence; Charge carrier density; Charge carrier lifetime; Cutoff frequency; Damping; Diode lasers; Leakage current; Optical devices; Resonance; Resonant frequency;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25591
Filename :
1482696
Link To Document :
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