DocumentCode :
108403
Title :
Highly Elastic Gold Passivated Mechanically Flexible Interconnects
Author :
Chaoqi Zhang ; Hyung Suk Yang ; Bakir, Muhannad S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
3
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
1632
Lastpage :
1639
Abstract :
A wafer-level batch fabricated mechanically flexible interconnect (MFI) technology with 65- μm vertical elastic range of motion is experimentally demonstrated. A metal alloy (NiW) with ultrahigh yield strength and enhanced geometrical design is adopted to enable elastic deformation over the entire vertical range of motion. The enhanced geometrical design of the MFIs ensures that the stress is distributed uniformly during deformation, and simultaneously maintains an inner stress that is lower than the yield strength of NiW during vertical deformation. In addition, the MFIs are passivated with gold, which is experimentally verified to not only lower the electrical resistance, but also significantly extends the lifetime of the MFIs as it eliminates oxidation of NiW. For 10- μm-thick Au-NiW MFIs, the contact force is up to 10 mN at 50- μm elastic vertical deformation (i.e., compliance of 5 mm/N).
Keywords :
elastic deformation; electrical resistivity; flexible electronics; gold; integrated circuit interconnections; nickel alloys; passivation; tungsten alloys; wafer level packaging; yield strength; Au-NiW; NiW metal alloy; contact force; elastic deformation; elastic gold passivation layer; elastic vertical deformation; electrical resistance; geometrical design; mechanically flexible interconnect technology; size 10 mum; size 65 mum; stress distribution; wafer-level; yield strength; Force; Gold; Passivation; Polymers; Silicon; Strain; Stress; CMOS/MEMS integration; NiW; flexible interconnects; gold passivation layer; packaging;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2013.2276436
Filename :
6588610
Link To Document :
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