DocumentCode :
1084072
Title :
A high temperature GaP MESFET
Author :
Weichold, M.H. ; Eknoyan, O. ; Kao, Y.C.
Author_Institution :
Texas A&M University, College Station, TX
Volume :
3
Issue :
11
fYear :
1982
fDate :
11/1/1982 12:00:00 AM
Firstpage :
344
Lastpage :
346
Abstract :
GaP MESFET\´s have been fabricated for the first time and the resulting devices are functional at temperatures of up to 295°C. The devices fabricated have 
and demonstrate a tranconductance of 200 µS. This value of transconductance is within 5% of the predicted value.
and demonstrate a tranconductance of 200 µS. This value of transconductance is within 5% of the predicted value.Keywords :
Aerospace electronics; Doping; Instruments; MESFETs; Photonic band gap; Schottky barriers; Silicon; Temperature; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25595
Filename :
1482700
Link To Document :
