DocumentCode
1084224
Title
Self-registered gradually doped source drain extension short channel CMOS/SOS devices
Author
Chen, M.L. ; Leung, B.C. ; Dingwall, A.G.F. ; Lalevic, B.
Author_Institution
RCA, Somerville, NJ
Volume
3
Issue
12
fYear
1982
fDate
12/1/1982 12:00:00 AM
Firstpage
387
Lastpage
390
Abstract
The oxide sidewall-spacer technology was utilized to fabricate CMOS/SOS devices with the self-registered gradually doped source drain extension structure. No additional photo masking or ion implantation steps are required than in the case of a conventional polysilicon gate CMOS/SOS process. The devices revealed significant improvements in the breakdown voltage, leakage current and the short channel effect.
Keywords
Boron; CMOS process; CMOS technology; Fabrication; Glass; Implants; Insulation; Leakage current; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25609
Filename
1482714
Link To Document