Monte Carlo Stress Engineering of Scaled (110) and (100) Bulk pMOSFETs

Bulk pMOSFET performance enhancement by combinations of SiGe pockets, compressively stressed cap liner and (110) surface orientation is investigated by mechanical stress and Monte Carlo device simulation. In agreement with recent measurements, the on-current gain by a (110) surface orientation of the 45 nm pMOSFET with a 3 GPa compressive cap liner is 32% and 16% without and with the presence of Si_0.8Ge_0.2 pockets, respectively. However, the performance enhancement by a (110) surface orientation strongly decreases upon scaling and for increasing liner stress. This suggests that the enhanced mobility for (110) surface orientation may lose its advantage in the limit of further scaling and increasing stress.