Electron transport in GaAs n+-p--n+submicron diodes

Experimental and calculated results are presented for the current-voltage characteristics in GaAs n⁺-p^--n⁺submicron diodes. It is found from the results that the drift-diffusion equation is a valid description in such short-channel diodes. It is also recognized that the electron velocity in the diodes is considerably higher than that in the long-channel, collision-dominated devices.