DocumentCode :
1084429
Title :
Effects of ambipolar excess carrier diffusion in pulsed laser annealing of semiconductors
Author :
Dae Kim ; Kwong, David
Author_Institution :
Rice University, Houston, TX, USA
Volume :
17
Issue :
12
fYear :
1981
fDate :
12/1/1981 12:00:00 AM
Firstpage :
2448
Lastpage :
2449
Keywords :
Absorption; Annealing; Heating; Laser beams; Laser modes; Laser theory; Lattices; Optical pulses; Semiconductor lasers; Thermal conductivity;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1070757
Filename :
1070757
Link To Document :
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