DocumentCode
1084585
Title
Unified analysis of the bulk unipolar diode
Author
Habib, Serac E D ; Board, Kenneth
Author_Institution
Cairo University, Giza, Egypt
Volume
30
Issue
2
fYear
1983
fDate
2/1/1983 12:00:00 AM
Firstpage
86
Lastpage
89
Abstract
A generalized model of the bulk unipolar diode (BUD) is analysed which allows for a direct comparison between the special cases of the Camel diode, the triangular barrier (TB) or planar doped barrier (PDB), and the p-plane barrier. The latter forms have been discussed separately in the literature but as yet no comparison has been made. Closed-form expressions for the functional dependence of the barrier heights on the applied voltage are obtained.
Keywords
Closed-form solution; Doping profiles; Heterojunctions; Neodymium; P-n junctions; Reproducibility of results; Schottky barriers; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21079
Filename
1482980
Link To Document