Title :
Unified analysis of the bulk unipolar diode
Author :
Habib, Serac E D ; Board, Kenneth
Author_Institution :
Cairo University, Giza, Egypt
fDate :
2/1/1983 12:00:00 AM
Abstract :
A generalized model of the bulk unipolar diode (BUD) is analysed which allows for a direct comparison between the special cases of the Camel diode, the triangular barrier (TB) or planar doped barrier (PDB), and the p-plane barrier. The latter forms have been discussed separately in the literature but as yet no comparison has been made. Closed-form expressions for the functional dependence of the barrier heights on the applied voltage are obtained.
Keywords :
Closed-form solution; Doping profiles; Heterojunctions; Neodymium; P-n junctions; Reproducibility of results; Schottky barriers; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21079
