Title :
A TaN-HfO2-Ge pMOSFET with NovelSiH4 surface passivation
Author :
Wu, Nan ; Zhang, Qingchun ; Zhu, Chunxiang ; Chan, D.S.H. ; Du, Anyan ; Balasubramanian, N. ; Li, M.-F. ; Chin, Albert ; Sin, Johnny K O ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼140% higher peak mobility than that of the device with surface nitridation.
Keywords :
MOSFET; annealing; carrier mobility; leakage currents; passivation; silicon compounds; tantalum compounds; HfO2 deposition; SiH4; SiH4 surface annealing; SiH4 surface passivation; TaN-HfO2-Ge; TaN-HfO2-Ge pMOSFET; amorphous interfacial layer; device fabrication; gate leakage current distribution; peak mobility; surface nitridation; surface passivation process; Amorphous materials; Annealing; Dielectric substrates; Fabrication; Germanium; Hafnium oxide; MOSFET circuits; Passivation; Silicon compounds; Ultra large scale integration; $hbox HfO_2$ ; Germanium; MOSFET; high-$kappa$; surface passivation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.833842
