High-frequency performance of subthreshold SOI MESFETs

Author

Jinman Yang ; Spann, J. ; Anderson, Richard ; Thornton, T.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

25

Issue

9

fYear

2004

Firstpage

652

Lastpage

654

Abstract

Results from silicon-on-insulator (SOI) MESFETs designed for subthreshold operation are presented. The transistors have subthreshold slopes as low as 78 mV/dec and off-state drain currents approaching 1 pA/μm. Drain current saturation can be achieved with drain voltages of less than 0.5 V and with output impedance>100 M/spl Omega//spl middot/μm. The cutoff frequency of a 500-nm gate length device exceeds 1 GHz at currents significantly less than 1 μA/μm. These results suggest that subthreshold SOI MESFETs might have useful applications in mixed-signal, micropower circuit design.

Keywords

Schottky barriers; Schottky gate field effect transistors; silicon-on-insulator; 500 nm; Schottky barriers; drain current saturation; drain voltages; micropower circuit design; mixed-signal circuit design; off-state drain currents; output impedance; silicon-on-insulator; subthreshold SOI MESFET; subthreshold slopes; transistors; CMOS technology; Cutoff frequency; Energy consumption; Etching; Implants; MESFETs; MOSFETs; Resists; Silicon on insulator technology; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.834245

Filename

1327724