DocumentCode
1084760
Title
Extinction ratio of stripe-geometry DH AlGaAs lasers with "soft" turn-on
Author
Chen, Yu Christine
Author_Institution
Optical Information Systems, Exxon Enterprises, Elmsford, NY, USA
Volume
17
Issue
12
fYear
1981
fDate
12/1/1981 12:00:00 AM
Firstpage
2262
Lastpage
2263
Abstract
The effect of high spontaneous emission on the extinction ratio of modulated laser-diode signals is discussed. A calculation based on the spectra taken from oxide-defined narrow-stripe lasers at `on´ and `off´ levels shows that high spontaneous emission at the `on´ level can degrade the apparent extinction ratio of the source, due to material dispersion in optical fibers, and affect transmission bandwidth and useful device lifetime.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; superradiance; III-V semiconductors; device lifetime; extinction ratio; high spontaneous emission; material dispersion; modulated laser-diode signals; optical fibers; oxide-defined narrow-stripe lasers; soft turn on; stripe-geometry DH AlGaAs lasers; transmission bandwidth; DH-HEMTs; Extinction ratio; Fiber lasers; Laser noise; Optical coupling; Optical fiber devices; Optical fibers; Optical refraction; Power lasers; Spontaneous emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1070787
Filename
1070787
Link To Document