Analysis of camel gate FET´s (CAMFET´s)

The performance of camel gate GaAs FET´s and its dependence on device parameters has been described. In particular, the dependence of the performance on the doping-thickness product of the p⁺layer was examined. Theoretical calculations indicate that using large p⁺doping-thickness products provides relatively voltage-independent transconductances and large reverse breakdown voltages, both of which are desirable in large signal applications. Decreasing the p⁺doping increases the transconductance, which is desirable in logic applications. Comparison with performance of fabricated devices indicates good agreement between theory and experiment over a wide range of structural parameters. Microwave measurements on CAMFET´s have yielded a gain of 10 dB at 9 GHz.