Title :
High power operation of multiquantum well DFB lasers at 1.3 μm
Author :
Chen, T.R. ; Chen, P.C. ; Ungar, J. ; Bar-Chaim, N.
Author_Institution :
Ortel Corp., Alhambra, CA, USA
fDate :
8/3/1995 12:00:00 AM
Abstract :
130 mW CW singlemode operation of an InGaAsP/InP strained multiquantum well DFB laser at 1.31 μm is reported. The laser showed low threshold current, high quantum efficiency and very good linearity
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; 1.3 micrometre; 130 mW; CW singlemode operation; InGaAsP-InP; InGaAsP/InP; linearity; multiquantum well DFB lasers; quantum efficiency; strained multiquantum well; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950894
