DocumentCode
1084878
Title
MBE grown strain-compensated AlGaInAs/AlGaInAs/InP MQW laser structures
Author
Hillmer, Hartmut ; Losch, R. ; Schlapp, W. ; Pocker, A. ; Burkhard, H.
Author_Institution
Deutsche Telekom, Darmstadt
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1346
Lastpage
1348
Abstract
Strain-compensated MQW structures with AlInGaAs barriers and up to 15 AlInGaAs wells were grown by molecular beam epitaxy (MBE) and characterised by photoluminescence and X-ray diffraction. Our structures show very low threshold currents of 4 mA and high AM modulation bandwidths of 21 GHz
Keywords
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 21 GHz; 4 mA; AM modulation bandwidths; AlGaInAs-AlGaInAs-InP; MBE; X-ray diffraction; molecular beam epitaxy; photoluminescence; strain-compensated MQW laser structures; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950902
Filename
408316
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