• DocumentCode
    1084896
  • Title

    Electron Attachment: A New Approach to H 2 Fluxless Solder Reflow for Wafer Bumping

  • Author

    Dong, C. Christine ; Patrick, Richard E. ; Karwacki, Eugene J.

  • Author_Institution
    Air Products & Chem. Inc., Allentown
  • Volume
    30
  • Issue
    3
  • fYear
    2007
  • Firstpage
    485
  • Lastpage
    490
  • Abstract
    Wafer bumping, via fluxless solder reflow, can be performed using electron attachment (EA) with nonflammable mixtures of hydrogen (= 4 vol%) in nitrogen. The EA process facilitates dissociation of molecular hydrogen at ambient pressure and a temperature significantly lower than that of thermal dissociation. Our studies suggest that the EA process promotes the formation of atomic hydrogen anions, which reduce solder oxides and facilitate fluxless solder reflows at temperatures close to the solder melting point.
  • Keywords
    dissociation; electron attachment; hydrogen; integrated circuit manufacture; manufacturing processes; nitrogen; reflow soldering; wafer bonding; atomic hydrogen anions; electron attachment; fluxless solder reflow; molecular hydrogen; nitrogen; nonflammable mixtures; solder melting point; solder oxides; thermal dissociation; wafer bumping; Adhesives; Assembly; Electron emission; Furnaces; Hydrogen; Nitrogen; Packaging; Printing; Temperature; Thermal degradation; Electric field effects; electron attachment; electron emission; fluxless solder reflow; hydrogen; wafer bumping; wafer-scale integration;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2007.901581
  • Filename
    4285931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084896