• DocumentCode
    1084911
  • Title

    Comparison of coplanar matching networks for V-band amplifiers

  • Author

    Schefer, M. ; Klepser, B.-U. ; Meier, H.P. ; Patrick, W. ; Lou, U. ; Bachtold, W.

  • Volume
    31
  • Issue
    16
  • fYear
    1995
  • fDate
    8/3/1995 12:00:00 AM
  • Firstpage
    1351
  • Lastpage
    1353
  • Abstract
    Integrated single-stage amplifiers with different matching networks have been fabricated and compared, using 0.25 μm indium phosphide high electron mobility transistors (InP-HEMT) and gain as high as 9.1 dB at 64 GHz and 10.5 dB at 44 GHz. And a 1 dB compression point of 7.5 dBm have been achieved
  • Keywords
    HEMT circuits; coplanar waveguides; impedance matching; microwave integrated circuits; millimetre wave amplifiers; 0.25 micron; 44 to 64 GHz; 9.1 to 10.5 dB; HEMT; V-band amplifiers; coplanar matching networks; high electron mobility transistors; integrated single-stage amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950934
  • Filename
    408319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084911