Strohm, K.M. ; Luy, J.F. ; Schäffler, F. ; Jorke, H. ; Kibbel, H. ; Rheinfelder, C. ; Doerner, R. ; Gerdes, J. ; Schmückle, F.J. ; Heinrich, W.
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Volume :
31
Issue :
16
fYear :
1995
fDate :
8/3/1995 12:00:00 AM
Firstpage :
1353
Lastpage :
1354
Abstract :
Design, technology and first results of a coplanar SiGe HBT amplifier monolithically integrated on high resistivity silicon are reported. The circuit provides a gain of 4 dB at 26 GHz
