Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models

Author

Apanovich, Y. ; Lyumkis, E. ; Polsky, B. ; Shur, A. ; Blakey, P.

Author_Institution

Silvaco Int., Santa Clara, CA, USA

Volume

13

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

702

Lastpage

711

Abstract

The differences between two widely used intermediate-level charge transport models are investigated. The origins of the models are reviewed, and mathematical relationships between the models are established. The practical consequences of the differences are investigated by comparing results obtained for several submicron structures. The predictions of the two models are shown to differ qualitatively, as well as quantitatively, for certain situations. An appendix summarizes the numerical techniques used to implement the models in a device simulator

Keywords

electronic engineering computing; numerical analysis; semiconductor device models; transient response; charge transport models; device simulator; energy balance models; hydrodynamic models; intermediate-level models; numerical techniques; steady-state analysis; submicron devices; transient analysis; Computational modeling; Differential equations; Electron mobility; Mathematical model; Partial differential equations; Steady-state; Temperature dependence; Temperature distribution; Thermal conductivity; Transient analysis;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.285243

Filename

285243