Temperature behavior of bright luminescence from LPE-grown Ga1-xAlxP structures

Author

Ermakov, O.N. ; Ignatkina, R.S. ; Karatsyuba, A.P. ; Sushkov, V.P. ; Aksenov, V.F.

Author_Institution

Ministry of Electronic Industry, Moscow, U.S.S.R.

Volume

30

Issue

4

fYear

1983

fDate

4/1/1983 12:00:00 AM

Firstpage

268

Lastpage

270

Abstract

Luminescent properties of LPE-grown Ga1-xAlxP ( $0 \\leq x \\geq 0.3$ ) structures have been studied over a wide temperature range. The complicated character of low-temperature luminescence is attributed to intrinsic and impurity-related recombination. The essential dependence of free exciton recombination upon temperature and composition is established for radiative Ga1-xAlxP structures. Anomalous and normal dependence of radiative efficiency on temperature has been shown to be characteristic of intrinsic and impurity-related luminescence. Thus the temperature dependence of the total luminescence can be controlled simply by varying the donor impurity doping level. LED\´s with luminous intensity $I_{V}= 2$ mcd at $T = 300$ K have been fabricated from the LPE-grown Ga1-xAlxP p-n structures which have high temperature stability of injection and breakdown luminescence efficiency, and emission band spectral position.

Keywords

Current density; Doping; Electric breakdown; Excitons; Impurities; Luminescence; Stability; Temperature control; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21115

Filename

1483016