An efficient analytical model for calculating trapped charge in amorphous silicon

Author

Tsai, Yao-Tsung ; Hong, Kuo-Don ; Yuan, Yin-Lun

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

13

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

725

Lastpage

728

Abstract

We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors

Keywords

Fermi level; amorphous semiconductors; electron traps; electronic density of states; elemental semiconductors; hole traps; hydrogen; semiconductor device models; silicon; thin film transistors; Fermi energy; Si:H; TFT; amorphous Si; analytical model; density-of-states distribution; exponential regions; thin-film transistors; trapped-charge density; Amorphous silicon; Analytical models; Charge carrier processes; Computational modeling; Computer simulation; Crystallization; Curve fitting; Numerical models; Probability distribution; Thin film transistors;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.285246

Filename

285246