• DocumentCode
    1085080
  • Title

    Positive feedback model of defect formation in gradually degraded GaAlAs light emitting devices

  • Author

    Kondo, Kazuo ; Ueda, Osamu ; Isozumi, Shoji ; Yamakoshi, Shigenobu ; Akita, Kenzo ; Kotani, T. ; Kotani, Tsuyoshi

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, MA
  • Volume
    30
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    321
  • Lastpage
    326
  • Abstract
    Defects in gradually degraded GaAlAs (0.8 µm wavelength) light emitting diodes have been evaluated by transmission electron microscope (TEM) and deep-level transient spectroscopy (DLTS). Two stages increase of deep-level defects has been observed by DLTS during device operation (reported in a previous paper). On the other hand, very small dislocation loops (15-50 nm in diameter) were observed in the active region by TEM at the end of the device operation. The nature of the dislocation loops was determined to be interstitial Frank loops with Burgers vector of ( a /3)
  • Keywords
    Crystals; DH-HEMTs; Degradation; Electron emission; Feedback; Laboratories; Light emitting diodes; Materials science and technology; Spectroscopy; Transmission electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21124
  • Filename
    1483025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085080