Title :
Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff
Author :
Justice, J. ; Corbett, B. ; Walsh, S. ; Considine, L. ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
fDate :
8/3/1995 12:00:00 AM
Abstract :
A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors are fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon substrate, and by fabrication of devices on post-transferred material. A 4×10 array of functioning devices is described
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; p-i-n photodiodes; photodetectors; vapour phase epitaxial growth; InGaAs; dark currents; epitaxial liftoff; integrated optoelectronics; mesa isolated photodetectors; pin photodetectors; post-transferred material; postprocessing techniques; preprocessing techniques;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950915
