DocumentCode :
1085186
Title :
Fabrication and characterisation of Si-Si0.7Ge0.3 quantum dot light emitting diodes
Author :
Tang, Y.S. ; Ni, W.X. ; Torres, C. M Sotomayor ; Hansson, G.V.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
31
Issue :
16
fYear :
1995
fDate :
8/3/1995 12:00:00 AM
Firstpage :
1385
Lastpage :
1386
Abstract :
The fabrication and room temperature operation of 50 nm quantum dot light emitting diodes based on Si-Si0.7Ge0.3 superlattices is described. The diodes emit light efficiently at 1.3 μm at room temperature with a threshold injection current of ~0.1 pA/dot
Keywords :
Ge-Si alloys; elemental semiconductors; light emitting diodes; nanotechnology; optical interconnections; semiconductor materials; semiconductor quantum dots; semiconductor superlattices; silicon; 1.3 micrometre; 50 nm; Si-Si0.7Ge0.3; nanofabrication; optical interconnects; quantum dot light emitting diodes; room temperature operation; superlattices; threshold injection current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950924
Filename :
408342
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1085186
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