• DocumentCode
    1085192
  • Title

    High-speed Ga0.51In0.49P/GaAs heterojunction phototransistors

  • Author

    Ha, K.H. ; Lee, Y.-H. ; Song, J.I. ; Caneau, C. ; Park, C.Y. ; Park, K.H.

  • Author_Institution
    Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • Volume
    31
  • Issue
    16
  • fYear
    1995
  • fDate
    8/3/1995 12:00:00 AM
  • Firstpage
    1386
  • Lastpage
    1387
  • Abstract
    A high speed Ga0.51In0.49P/GaAs heterojunction phototransistor grown by metal organic vapour phase epitaxy (MOVPE) is reported. High frequency measurements indicate that the device has a cutoff frequency of 1.7 GHz with a 50 Ω output load. The impulse response of the device is measured to be ~60 ps full width at half maximum (FWHM). The phototransistor exhibits an external AC gain of 29 at an incident power of 500 μW
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; phototransistors; semiconductor epitaxial layers; semiconductor growth; transient response; vapour phase epitaxial growth; 1.7 GHz; 50 ohm; 500 muW; 60 ps; Ga0.51In0.49P-GaAs; HBTs; cutoff frequency; external AC gain; full width at half maximum; heterojunction phototransistors; impulse response; incident power; metal organic vapour phase epitaxy; output load;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950889
  • Filename
    408343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085192