Title :
InP:Fe photoconductors as photodetectors
Author :
Hammond, Robert B. ; Paulter, Nicholas G. ; Wagner, Ronald S. ; Springer, Thomas E. ; Roberts, Martin D J Mac
Author_Institution :
Los Alamos National Laboratory, Los Alamos, NM
fDate :
4/1/1983 12:00:00 AM
Abstract :
Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are Observed.
Keywords :
Circuits; Conductivity; Contacts; Indium phosphide; Photoconducting devices; Photoconducting materials; Photoconductivity; Photodetectors; Radiative recombination; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21138
