Title :
High transconductance normally-off GaN MODFETs
Author :
Özgür, A. ; Kim, W. ; Fan, Z. ; Botchkarev, A. ; Salvador, A. ; Mohammad, S.N. ; Sverdlov, B. ; Morkoc, H.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
fDate :
8/3/1995 12:00:00 AM
Abstract :
Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 μm, respectively, is as high as 120 mS/mm. The devices exhibit 300 mA/mm current at a positive gate bias of 3 V. This transconductance value compares very favourably with the 45 mS/mm and 24 mS/mm reported earlier for 1 and 0.23 μm gate devices, respectively
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; 120 mS/mm; 3 V; 3 micron; 5 micron; GaN; MODFETs; field-effect transistors; high extrinsic transconductance; modulation doped FET; normallyoff devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950921
