Title :
High-low doped power MESFET with 32.0 dBm output power for 3.0 V digital/analogue dual-mode hand-held telephones
Author :
Lee, J.L. ; Mun, J.K. ; Kim, H. ; Lee, H.-G. ; Pyun, K.E. ; Park, H.M.
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
8/3/1995 12:00:00 AM
Abstract :
A 3.0 V operating GaAs power MESFET for digital/analogue dual-mode hand-held telephones has been developed with state-of-the-art performance using a high-low doped structure grown by molecular beam epitaxy (MBE). For analogue mode, the MESFET tested at a 3.0 V drain bias and a 900 MHz operation frequency, displayed a power-added efficiency of 68% with an output power of 32.0 dBm. For digital mode, the device showed that third-order intermodulation and power-added efficiency at an output power of 27.2 dBm were -33.2 dBc and 38.7%, respectively
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; molecular beam epitaxial growth; power MESFET; radiotelephony; 3 V; 38.7 percent; 68 percent; 900 MHz; GaAs; MBE; UHF operation; digital/analogue dual-mode hand-held telephones; high-low doped structure; molecular beam epitaxy; power MESFET; power-added efficiency; third-order intermodulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950904
