Title :
Vertical MOS technology with sub-0.1 μm channel lengths
Author :
Gossner, H. ; Wittmann, F. ; Eisele, I. ; Grabulla, T. ; Behammer, D.
Author_Institution :
Univ. der Bundeswehr Munchen, Neubiberg, Germany
fDate :
8/3/1995 12:00:00 AM
Abstract :
A vertical MOSFET with a channel length of 85 nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical behaviour has been greatly improved, allowing the use of standard simulation tools for analysing the I-V characteristics. From experimental and theoretical results. We conclude that for vertical MOSFETs. The useful minimum channel length is not limited by the technological constraints but by the physical limits of the electrical performance. The useful minimum channel length is estimated to be ~80 nm
Keywords :
MOS integrated circuits; MOSFET; integrated circuit technology; molecular beam epitaxial growth; semiconductor growth; 80 to 85 nm; I-V characteristics; MBE; electrical behaviour; minimum channel length; molecular beam epitaxy; vertical MOS technology; vertical MOSFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950890
