Title :
High-power single-mode ZnO thin-film random lasers
Author :
Yu, S.F. ; Leong, Eunice S P
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The possibilities to realize high-power single-mode ultraviolet lasing in highly disordered zinc oxide (ZnO) thin films are investigated. An effective one-dimensional time-domain traveling-wave model is developed to simulate random laser action in ZnO thin-film waveguides with ridge structure. Spectral and spatial redistributions of lasing modes, due to lasing mode localization and repulsion, are shown in highly disordered media. Hence, by controlling the photon density distribution, selective excitation of lasing modes can be achieved. A coupled-cavity ZnO thin-film random laser is also proposed to achieve high-power single-mode operation under nonuniform pumping. Preliminary experimental results have verified the possibility to realize high-power single-mode emission by the use of the proposed coupled-cavity design.
Keywords :
II-VI semiconductors; laser cavity resonators; laser modes; optical pumping; semiconductor device models; semiconductor lasers; semiconductor thin films; ultraviolet spectra; waveguide lasers; wide band gap semiconductors; zinc compounds; ZnO; ZnO thin film; coupled-cavity design; high-power lasers; highly disordered media; lasing mode localization; lasing mode repulsion; lasing modes; nonuniform pumping; one-dimensional time-domain traveling wave model; photon density distribution; random lasers; ridge structure; selective excitation; single-mode lasers; spatial redistribution; spectral redistribution; ultraviolet lasing; Finite difference methods; Laser excitation; Laser modes; Optical waveguides; Pump lasers; Semiconductor thin films; Time domain analysis; Transistors; Waveguide lasers; Zinc oxide; Random lasing action; ZnO; semiconductor laser modeling; thin films; zinc oxide;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.833221
