Title :
Nonlinear thermo-optic model for the characterization of optical self-heating in electro-optic semiconductors
Author :
Reano, Ronald M. ; Whitaker, John F. ; Katehi, Linda P B
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A nonlinear thermo-optic model for the characterization of electro-optic semiconductor probes used to simultaneously measure electric field and temperature is presented. Optical thermal self-heating of the semiconductor is shown to be the primary limiting mechanism for temperature dynamic range, electro-optic modulation power, temperature sensitivity, temperature contrast, and temperature invasiveness. Tradeoff considerations of these parameters as a function of optical wavelength and input optical power are discussed. Optical temporal defocusing is shown to minimize the effects of nonlinear absorption. Simulation results are compared with measurements.
Keywords :
III-V semiconductors; electro-optical effects; electro-optical modulation; nonlinear optics; optical focusing; optoelectronic devices; semiconductor device models; thermo-optical effects; GaAs; electro-optic effects; electro-optic modulation power; electro-optic semiconductors; electrothermal effects; nonlinear absorption; nonlinear thermo-optic model; optical power; optical self-heating; optical temporal defocusing; optical wavelength; optoelectronic devices; semiconductor materials; temperature contrast; temperature dynamic range; temperature invasiveness; temperature sensitivity; thermal self-heating; Dynamic range; Electric variables measurement; Electrooptic modulators; Nonlinear optics; Optical modulation; Optical sensors; Probes; Temperature distribution; Temperature sensors; Wavelength measurement; Electro-optic effects; electrothermal effects; optoelectronic devices; semiconductor materials;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.833244