DocumentCode
1085296
Title
Thin-film electroluminescent devices: Influence of Mn-doping method and degradation phenomena
Author
Menn, Roger ; Tueta, Roger J. ; Izrael, Alice ; Braguier, Michel
Author_Institution
Centre National d´´Etudes des Telecommunications, Bagneux, France
Volume
30
Issue
5
fYear
1983
fDate
5/1/1983 12:00:00 AM
Firstpage
460
Lastpage
463
Abstract
Comparative experiments on ac thin-film electroluminescent (ACTFEL) emitters show the influence of the electroluminescent source material preparation on the L(V) characteristic. The influence on the polycrystalline structure has been investigated by Scanning Transmission Electron Microscopy (STEM). Different types of degradation occurring during sustained operation of the devices are reported and solutions proposed.
Keywords
Degradation; Electroluminescent devices; Indium tin oxide; Manganese; Materials preparation; Powders; Substrates; Temperature; Thin film devices; Zinc compounds;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21147
Filename
1483048
Link To Document