DocumentCode :
1085296
Title :
Thin-film electroluminescent devices: Influence of Mn-doping method and degradation phenomena
Author :
Menn, Roger ; Tueta, Roger J. ; Izrael, Alice ; Braguier, Michel
Author_Institution :
Centre National d´´Etudes des Telecommunications, Bagneux, France
Volume :
30
Issue :
5
fYear :
1983
fDate :
5/1/1983 12:00:00 AM
Firstpage :
460
Lastpage :
463
Abstract :
Comparative experiments on ac thin-film electroluminescent (ACTFEL) emitters show the influence of the electroluminescent source material preparation on the L(V) characteristic. The influence on the polycrystalline structure has been investigated by Scanning Transmission Electron Microscopy (STEM). Different types of degradation occurring during sustained operation of the devices are reported and solutions proposed.
Keywords :
Degradation; Electroluminescent devices; Indium tin oxide; Manganese; Materials preparation; Powders; Substrates; Temperature; Thin film devices; Zinc compounds;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21147
Filename :
1483048
Link To Document :
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