Title :
A Parallel Power Amplifier With a Novel Mode Switching Control
Author :
Han, Kichon ; Kim, Bumman
Author_Institution :
Pohang Univ. of Sci. & Technol., Gyeongbuk
fDate :
3/1/2008 12:00:00 AM
Abstract :
Two parallel operating power amplifiers (PAs) are controlled by a novel mode switch for high efficiencies at both the back-off power region and high power region. The mode switch is realized by the base-collector (BC) junction diode which reuses the dc current of the low power mode amplifier. A 836 MHz CDMA PA has been demonstrated using InGaP/GaAs heterojunction bipolar transistor with fully integrated matching component for small package and low cost. It shows a 13 mA idle current, 15.4% power added efficiency (PAE), ACPR1 at 16 dBm of the low power mode operation and a 40.5% PAE, ACPR1 at 28 dBm of the high power mode operation.
Keywords :
III-V semiconductors; UHF power amplifiers; code division multiple access; gallium arsenide; heterojunction bipolar transistors; indium compounds; switched mode power supplies; CDMA; InGaP-GaAs; back-off power region; base-collector junction diode; frequency 836 MHz; heterojunction bipolar transistor; integrated matching component; low power mode amplifier; mode switching control; parallel power amplifier; power added efficiency; Back-off power operation; mode switching; power amplifier (PA); power-added efficiency (PAE);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.916813
