Title :
Design and realization of high-power ripple-free superluminescent diodes at 1300 nm
Author :
Fu, Liwei ; Schweizer, Heinz ; Zhang, Yanshen ; Li, Lan ; Baechle, Andreas M. ; Jochum, Stephan ; Bernatz, Georg C. ; Hansmann, Stefan
Author_Institution :
Phys. Inst., Univ. of Stuttgart, Germany
Abstract :
To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. It was found that the structure employing a graded-refractive-index separate-confinement heterostructure, with linearly graded p-doped cap layer and with eight quantum wells, is most suitable for high-power SLDs. With a proper design of a geometrical structure for SLDs, the obtained output power at 20°C is about 25 mW under CW operation and 100 mW at 1.1 A under pulsed operation with no observable ripple.
Keywords :
refractive index; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor quantum wells; superluminescent diodes; 1.1 A; 100 mW; 1300 nm; 20 degC; CW operation; epitaxial layers; geometrical structure design; graded-refractive-index separate-confinement heterostructure; high-power superluminescent diodes; p-doped cap layer; pulsed operation; quantum wells; structure parameters; Capacitive sensors; Epitaxial layers; Gyroscopes; Optical coupling; Optical fiber devices; Power generation; Quantum well devices; Semiconductor optical amplifiers; Superluminescent diodes; Wavelength division multiplexing; GRIN; Graded-refractive-index; gyroscope; superluminescent diode; wavelength division multiplexing;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.830178
