DocumentCode :
1085416
Title :
On the relationship between Schottky barrier capacitance and mixer performance at cryogenic temperatures
Author :
Romanofsky, Robert R.
Volume :
6
Issue :
8
fYear :
1996
Firstpage :
286
Abstract :
The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.
Keywords :
Capacitance; Capacitance-voltage characteristics; Cryogenics; Noise figure; Performance analysis; Predictive models; Schottky barriers; Schottky diodes; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.508555
Filename :
508555
Link To Document :
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