Title :
A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetectors
Author :
Li, Xiaowei ; Li, Ning ; Demiguel, Stéphane ; Campbell, Joe C. ; Tulchinsky, David ; Williams, Keith J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
A systematic study of high-saturation-current p-i-n In0.53Ga0.47As photodiodes with a partially depleted absorber (PDA) has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In0.53Ga0.47As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; space charge; 1 GHz; 10 GHz; 100 mum; 2 V; 23 mA; 24 mA; 250 nm; 34 mum; 450 nm; 60 nm; 76 mA; In0.53Ga0.47As; backside illumination; device lateral resistance; front illumination; high-saturation-current p-i-n photodiodes; partially depleted absorber photodetectors; space charge effect; High speed optical techniques; Lighting; Linear antenna arrays; Optical arrays; Phased arrays; Photoconductivity; Photodiodes; Radio frequency; Space charge; Thermal conductivity; High-power photodetecters; photodetecters; saturation current; sheet resistance; space charge effect;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.833206
