DocumentCode
1085544
Title
GaAs0.6 P0.4 LED´s with efficient transparent contacts for spatially uniform light emission
Author
Lawrence, David J. ; Abbas, Daniel C. ; Phelps, Daniel J. ; Smith, Frank T.J.
Author_Institution
Eastman Kodak Company, Rochester, NY
Volume
30
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
580
Lastpage
585
Abstract
Indium-tin oxide (ITO) and cadmium-tin oxide (CTO) transparent contacts have been used on GaAs0.6 P0.4 planar, red-light-emitting diodes. The entire emitting area of the diode can be contacted without blocking any of that area with opaque metal. Furthermore, the low sheet resistance of the transparent conducting films (2.5 to 3.5 ω/□) makes the spatial distribution of the emitted light more uniform. The spatial uniformity of the light output of LED´s fabricated with transparent contacts is compared with that of conventional LED´s. The current-voltage characteristics of the two types of LED are also compared. For an average current density of 25 A/cm2, an undesirable excess voltage (> 1.2 V) is developed across the reverse-biased (n-transparent conductor)-(p-GaAs0.6 P0.4 ) heterojunction. Procedures are described for reducing and, in some cases, completely eliminating this voltage by introducing a thin, transparent metal film between the transparent conductor and the GaAs0.6 P0.4 . The resulting devices have optical and electrical efficiencies comparable to those of conventional LED´s.
Keywords
Conductive films; Current density; Current-voltage characteristics; Gallium arsenide; Heterojunctions; Indium tin oxide; Light emitting diodes; Optical devices; Optical films; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21172
Filename
1483073
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