• DocumentCode
    1085544
  • Title

    GaAs0.6P0.4LED´s with efficient transparent contacts for spatially uniform light emission

  • Author

    Lawrence, David J. ; Abbas, Daniel C. ; Phelps, Daniel J. ; Smith, Frank T.J.

  • Author_Institution
    Eastman Kodak Company, Rochester, NY
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    580
  • Lastpage
    585
  • Abstract
    Indium-tin oxide (ITO) and cadmium-tin oxide (CTO) transparent contacts have been used on GaAs0.6P0.4planar, red-light-emitting diodes. The entire emitting area of the diode can be contacted without blocking any of that area with opaque metal. Furthermore, the low sheet resistance of the transparent conducting films (2.5 to 3.5 ω/□) makes the spatial distribution of the emitted light more uniform. The spatial uniformity of the light output of LED´s fabricated with transparent contacts is compared with that of conventional LED´s. The current-voltage characteristics of the two types of LED are also compared. For an average current density of 25 A/cm2, an undesirable excess voltage (> 1.2 V) is developed across the reverse-biased (n-transparent conductor)-(p-GaAs0.6P0.4) heterojunction. Procedures are described for reducing and, in some cases, completely eliminating this voltage by introducing a thin, transparent metal film between the transparent conductor and the GaAs0.6P0.4. The resulting devices have optical and electrical efficiencies comparable to those of conventional LED´s.
  • Keywords
    Conductive films; Current density; Current-voltage characteristics; Gallium arsenide; Heterojunctions; Indium tin oxide; Light emitting diodes; Optical devices; Optical films; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21172
  • Filename
    1483073