Title :
Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers
Author :
Sale, T.E. ; Woodhead, J. ; Grey, R. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
Very low threshold current density operation of triple quantum well vertical-cavity surface-emitting lasers (VCSELs) is reported. The active wells are strained In/sub 0.24/Ga/sub 0.76/As in GaAs. Devices from the same wafer operate at room temperature over a wavelength range of 958-1042 nm, with a minimum threshold current density of 366 A-cm/sup -2/ at 1018 nm. The dependence of threshold current on wavelength gives an insight into the optical gain spectrum of the quantum wells. It was shown that 50- mu m-diameter devices operate CW without heatsinking.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 1018 nm; 50 micron; 958 to 1042 nm; CW lasing; IR; InGaAs-GaAs; active wells; low threshold current density operation; minimum threshold current density; optical gain spectrum; room temperature; semiconductors; strained; triple quantum well; vertical-cavity surface-emitting lasers; wavelength range; Gallium arsenide; Indium; Mirrors; Molecular beam epitaxial growth; Optical superlattices; Optical surface waves; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
