Short wavelength (699 nm) electrically pumped vertical-cavity surface-emitting lasers

Author

Tell, B. ; Leibenguth, R.E. ; Brown-Goebeler, K.F. ; Livescu, G.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

4

Issue

11

fYear

1992

Firstpage

1195

Lastpage

1196

Abstract

Room-temperature lasing has been achieved in vertical-cavity surface-emitting laser structures for wavelengths as short as 699 nm under pulsed electrical excitation. The molecular beam epitaxially grown structures have p- and n-type semiconductor quarter wave mirror stacks enclosing an active region containing a short period GaAs-AlAs superlattice.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; laser cavity resonators; mirrors; semiconductor lasers; 699 nm; IR; MBE growth; active region; electrically pumped; laser structures; molecular beam epitaxially grown structures; n-type; p-type; pulsed electrical excitation; room temperature lasing; semiconductor growth; semiconductor quarter wave mirror stacks; semiconductor superlattices; short period GaAs-AlAs superlattice; vertical-cavity surface-emitting lasers; Laser excitation; Mirrors; Molecular beam epitaxial growth; Optical pulses; Pump lasers; Semiconductor lasers; Semiconductor superlattices; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.166939

Filename

166939