Title :
Titanium silicide contacts on semiconducting diamond substrates
Author :
Humphreys, T.P. ; Labrasca, I.V. ; Nemanich, R.J. ; Das, K. ; Posthill, I.B.
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the codeposition of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400 degrees C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100 degrees C in a vacuum of approximately 10-6 Torr for 30 min, stable rectifying I-V characteristics were observed in the 25-400 degrees C temperature range.
Keywords :
Schottky effect; Schottky-barrier diodes; diamond; elemental semiconductors; ohmic contacts; semiconductor technology; semiconductor-metal boundaries; 10 -6 torr; 1100 C; 25 to 400 C; 30 min; I-V measurements; Schottky contacts; TiSi 2-C; TiSi 2-diamond contacts; annealing; electron-beam evaporation; high temperature electronics; natural diamond substrates; ohmic contacts; p-type diamond; rectifying I-V characteristics; rectifying characteristics; room temperature; semiconducting diamond substrates; semiconductors; silicides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910952
