Title :
A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process
Author :
Sano, Eiichi ; Yoneyama, Mikio ; Nakajima, Hiroki ; Matsuoka, Yutaka
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
4/1/1994 12:00:00 AM
Abstract :
We demonstrate, for the first time, the characteristics of an InP/InGaAs HBT-compatible pin-PD and a monolithically integrated pin/HBT photoreceiver. The pin-PD can produce a short pulse with an FWHM of 80.8 ps followed by an elongated tail, when illuminated by optical pulses with an FWHM of 40 ps and a wavelength of 1.3 μm. The fall time of the output is determined by the transit time of holes generated in the n +-InGaAs layer. The monolithically integrated photoreceiver, consisting of the pin-PD and a transimpedance preamplifier, can operate at 2.5 Gb/s with a sensitivity of -9.8 dBm. This performance was mainly limited by the characteristics of the pin-PD
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.3 mum; 2.5 Gbit/s; 40 ps; 80.8 ps; InP-InGaAs; InP/InGaAs HBT fabrication process; elongated tail; fall time; hole generation; monolithically integrated; monolithically integrated photoreceiver; n+-InGaAs layer; optical pulse illumination; p-i-n photodiode; pin-PD; pin/HBT photoreceiver; sensitivity; short pulse; transimpedance preamplifier; transit time; Capacitors; Cutoff frequency; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical pulse generation; Optical pulses; Photodetectors; Tail;
Journal_Title :
Lightwave Technology, Journal of
