Title :
InGaAs/GaAs QD-based electro-optic modulator with over 100nm bandwidth at 1.55 μm
Author :
Moreau, G. ; Martinez, A. ; Cong, D.-Y. ; Merghem, K. ; Miard, A. ; Lemaitre, A. ; Voisin, P. ; Ramdane, A.
Author_Institution :
CNRS, Lab. for Photonics & Nanostruct., Marcoussis
Abstract :
The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100 nm) applications at 1.55 mum is demonstrated. A ~35% enhancement of the phase variation (Vpi ~ 3.5 V for 4 mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; phase modulation; semiconductor quantum dots; 1.55 micron; 4 mm; InGaAs-GaAs; electrooptic modulator; phase modulator; phase variation enhancement; semiconductor quantum dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20073515
