• DocumentCode
    1085850
  • Title

    Bipolar transistor with minimized collector-to-base junction area

  • Author

    Antipov, Igor

  • Author_Institution
    IBM General Technology Division, Hopewell Junction, NY
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    723
  • Lastpage
    726
  • Abstract
    A novel n-p-n bipolar transistor structure with polysilicon base contacts and minimized collector-to-base junction area is described. Device data obtained for this structure show that while device parameters dependent on the device doping profile remain unaffected, a considerable improvement is obtained in device parameters dependent on the size of the collector-to-base junction area.
  • Keywords
    Bipolar transistors; Boron; Doping profiles; Electron devices; Fabrication; Impurities; Iterative methods; Nonlinear equations; Oxidation; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21200
  • Filename
    1483101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085850