Title :
Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
Author :
Jong-In Song ; Hong, B.W.-P. ; Palmstrom, C.J. ; Van Der Gaag, B.P. ; Chough, K.B.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
We report on the microwave performance of InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBT´s) utilizing a carbon-doped base grown by chemical beam epitaxy (CBE). The fT and fmax of the HBT having two 1.5×10 μm2 emitter fingers were 175 GHz and 70 GHz, respectively, at I/sub C/=40 mA and V/sub CE/=1.5 V. To our knowledge, the fT of this device is the highest of any type of bipolar transistors yet reported. These results indicate the great potential of carbon-doped base InP/InGaAs HBT´s for high-speed applications.
Keywords :
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 1 to 26 GHz; 1.5 V; 175 GHz; 40 mA; 70 GHz; C-doped base; InGaAs:C; InP; InP-In/sub 0.53/Ga/sub 0.47/As; InP/InGaAs heterojunction bipolar transistors; chemical beam epitaxy; cutoff frequency; emitter fingers; maximum frequency of oscillation; microwave S-parameters; microwave performance; small-signal current gain; small-signal power gain; ultra-high-speed performance; Bipolar transistors; Chemicals; Doping; Epitaxial growth; Fingers; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth;
Journal_Title :
Electron Device Letters, IEEE
